USE OF ION-INDUCED X-RAYS TO LOCATE ION-IMPLANTED IMPURITIES IN GALLIUM-ARSENIDE

被引：8

作者：

TAKAI, M ^{[1
]}

GAMO, K ^{[1
]}

YAGITA, H ^{[1
]}

MASUDA, K ^{[1
]}

NAMBA, S ^{[1
]}

MIZOBUCHI, A ^{[1
]}

机构：

[1] OSAKA UNIV,FAC SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS | 1978年 / 149卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(78)90908-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：457 / 459

页数：3

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