USE OF ION-INDUCED X-RAYS TO LOCATE ION-IMPLANTED IMPURITIES IN GALLIUM-ARSENIDE

被引：8
|
作者：
TAKAI, M [1 ]
GAMO, K [1 ]
YAGITA, H [1 ]
MASUDA, K [1 ]
NAMBA, S [1 ]
MIZOBUCHI, A [1 ]
机构：
[1] OSAKA UNIV,FAC SCI,TOYONAKA,OSAKA 560,JAPAN
来源：
NUCLEAR INSTRUMENTS & METHODS | 1978年 / 149卷 / 1-3期
关键词：
D O I：
10.1016/0029-554X(78)90908-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：457 / 459
页数：3
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