GASB SINGLE-CRYSTALS DOPED WITH MANGANESE

被引：14

作者：

SESTAKOVA, V

HUBIK, P

STEPANEK, B

KRISTOFIK, J

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 132卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(93)90281-Z

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

[111] GaSb single crystals doped with manganese were grown using the Czochralski method without encapsulant in a reducing atmosphere of flowing hydrogen. Using the Mn concentrations calculated from the Hall measurement, the distribution coefficient (k(eff)) of manganese in GaSb was estimated to be k(eff) = 0.011 +/- 0.001. The dislocation density, which increases along the growth direction, has also been found to be in contrast to other nonvolatile dopants in Gasb.

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页码：345 / 347

页数：3

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