SCHOTTKY-BARRIER GA1-XALXAS1-YSBY ALLOY AVALANCHE PHOTODETECTORS

被引：8

作者：

CHIN, R

LAW, HD

NAKANO, K

MILANO, RA

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 06期

关键词：

D O I：

10.1063/1.91982

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：550 / 551

页数：2

共 14 条

[1]

[Anonymous], 1977, SEMICONDUCTORS SEMIM

[2] VERY HIGH QUANTUM EFFICIENCY GASB MESA PHOTODETECTORS BETWEEN 1.3 AND 1.6-MU-M [J].

CAPASSO, F ;

PANISH, MB ;

SUMSKI, S ;

FOY, PW .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :165-167

[3] LIQUID-PHASE EPITAXIAL-GROWTH OF LATTICE-MATCHED INGAASP ON (100)-INP FOR 1.15-1.31-MU-M SPECTRAL REGION [J].

FENG, M ;

WINDHORN, TH ;

TASHIMA, MM ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1978, 32 (11) :758-761

[4] EVIDENCE FOR TUNNELING IN REVERSE-BIASED III-V PHOTODETECTOR DIODES [J].

FORREST, SR ;

DIDOMENICO, M ;

SMITH, RG ;

STOCKER, HJ .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :580-582

[5] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ ;

ROSSI, JA ;

DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1976, 28 (12) :709-711

[6] GAINASP-INP AVALANCHE PHOTO-DIODES [J].

HURWITZ, CE ;

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :487-489

[7] ALGAASSB AVALANCHE PHOTO-DIODES FOR 1.0-1.3-MU-M WAVELENGTH REGION [J].

KAGAWA, T ;

MOTOSUGI, G .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) :2317-2318

[8] ION-IMPLANTED INGAASP AVALANCHE PHOTO-DIODE [J].

LAW, HD ;

TOMASETTA, LR ;

NAKANO, K .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :920-922

[9]

LAW HD, 1978, APPL PHYS LETT, V33, P640

[10] CRYSTAL SYNTHESIS, ELECTRICAL PROPERTIES, AND SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE OF IN1-XGAXP-N GROWN FROM SOLUTION [J].

MACKSEY, HM ;

HOLONYAK, N ;

DUPUIS, RD ;

CAMPBELL, JC ;

ZACK, GW .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1333-1341

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