RECOMBINATION PROCESSES IN P-TYPE INDIUM ANTIMONIDE

被引:125
作者
ZITTER, RN
STRAUSS, AJ
ATTARD, AE
机构
来源
PHYSICAL REVIEW | 1959年 / 115卷 / 02期
关键词
D O I
10.1103/PhysRev.115.266
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:266 / 273
页数:8
相关论文
共 22 条
[11]   AUGER EFFECT IN SEMICONDUCTORS [J].
LANDSBERG, PT ;
BEATTIE, AR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :73-75
[12]  
LANDSBERG PT, 1957, P PHYS SOC LONDON B, V70, P283
[13]  
LAX M, 1959, J PHYS CHEM SOLIDS, V8, P166
[14]  
LAX M, 1956, B AM PHYS SOC, V1, P128
[15]   THE LIFETIME OF ADDED CARRIERS IN INSB [J].
MACKINTOSH, IM ;
ALLEN, JW .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (12) :985-990
[16]   RECOMBINATION OF EXCESS CARRIERS IN SEMICONDUCTORS [J].
OKADA, JI .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1957, 12 (12) :1338-1344
[17]   ELECTRON-HOLE RECOMBINATION STATISTICS IN SEMICONDUCTORS THROUGH FLAWS WITH MANY CHARGE CONDITIONS [J].
SAH, CT ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1958, 109 (04) :1103-1115
[18]  
SHOCKLEY W, 1952, PHYS REV, V87, P825
[19]   DISTRIBUTION COEFFICIENTS AND CARRIER MOBILITIES IN INSB [J].
STRAUSS, AJ .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :559-563