RECOMBINATION PROCESSES IN P-TYPE INDIUM ANTIMONIDE

被引:125
作者
ZITTER, RN
STRAUSS, AJ
ATTARD, AE
机构
来源
PHYSICAL REVIEW | 1959年 / 115卷 / 02期
关键词
D O I
10.1103/PhysRev.115.266
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:266 / 273
页数:8
相关论文
共 22 条
[1]   CARRIER CAPTURE PROBABILITIES IN NICKEL DOPED GERMANIUM [J].
BATTEY, JF ;
BAUM, RM .
PHYSICAL REVIEW, 1955, 100 (06) :1634-1637
[2]   POSSIBLE MECHANISM FOR RADIATIONLESS RECOMBINATION IN SEMICONDUCTORS [J].
BESS, L .
PHYSICAL REVIEW, 1957, 105 (05) :1469-1475
[3]   SPONTANEOUS RADIATIVE RECOMBINATION IN SEMICONDUCTORS [J].
DUMKE, WP .
PHYSICAL REVIEW, 1957, 105 (01) :139-144
[4]   RADIATIVE RECOMBINATION IN INSB [J].
GOODWIN, DW ;
MCLEAN, TP .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (06) :689-690
[5]   PROPERTIES OF P-TYPE INDIUM ANTIMONIDE .1. ELECTRICAL PROPERTIES [J].
HILSUM, C ;
BARRIE, R .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (460) :676-685
[6]  
HOWARTH, 1957, P PHYS SOC LONDON B, V70, P124
[7]  
HROSTOWSKI, 1955, PHYS REV, V100, P1672
[8]   STUDIES ON THE RECOMBINATION OF ELECTRONS AND HOLES IN GERMANIUM [J].
KALASHNIKOV, SG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :52-59
[9]   PHOTOCONDUCTIVE AND PHOTOELECTROMAGNETIC EFFECTS IN INSB [J].
KURNICK, SW ;
ZITTER, RN .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (03) :278-285
[10]  
LAFF RA, 1957, B AM PHYS SOC 2, V2, P347