FAR-IR CHARACTERIZATION OF GAINAS/INP QUANTUM-WELLS AND SUPERLATTICES

被引：0

作者：

AMIOTTI, M

GUIZZETTI, G

PATRINI, M

LANDGREN, G

机构：

[1] UNIV PAVIA,DIPARTIMENTO FIS A VOLTA,I-27100 PAVIA,ITALY

[2] ROYAL INST TECHNOL,SEMICOND LAB,S-16440 KISTA,SWEDEN

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期

关键词：

QUANTUM WELL; IR SPECTROSCOPY; SUPERLATTICES; PHONONS AND VIBRATIONS;

D O I：

10.1016/0921-5107(94)90078-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We used far-IR reflectance spectra to characterize a series of Ga0.53In0.47As/InP multiple quantum well and superlattices grown by metal-organic vapour phase epitaxy on InP:S substrates, with well widths ranging from 10 to 92 Angstrom and barriers from 7 to 135 Angstrom. We obtained good fitting to the experimental spectra by taking into account the complex dielectric functions of the quantum structures, in the effective-medium approximation, and using the transfer matrix formalism. The thickness of wells and barriers were determined from the fit, and the values of energies and broadening of phonon modes.

引用

页码：337 / 340

页数：4

共 15 条

[1]

ADACHI S, 1993, PROPERTIES LATTICE M, P47

[2] NOTES ON CRYSTAL OPTICS OF SUPERLATTICES [J].