SILICON DIOXIDE THIN-FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION FROM SILICON TETRAACETATE

被引：17

作者：

MARUYAMA, T

TAGO, T

机构：

[1] Department of Chemical Engineering, Faculty of Engineering, Kyoto University, Kyoto

来源：

THIN SOLID FILMS | 1993年 / 232卷 / 02期

关键词：

D O I：

10.1016/0040-6090(93)90009-E

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon dioxide thin films were prepared by a direct photochemical vapor deposition method, The raw material was silicon tetraacetate which is non-toxic and easy to handle. A 6 W low-pressure mercury lamp was used as a light source. Thin films were obtained in an inert atmosphere at a substrate temperature of above 110-degrees-C. The deposition rate was higher than for thermal chemical vapor deposition, which is only possible in the presence of oxygen gas.

引用

页码：201 / 203

页数：3

共 5 条

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[4]

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[5]

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