INITIAL OXIDATION AND OXIDE SEMICONDUCTOR INTERFACE FORMATION ON GAAS

被引：90

作者：

WILMSEN, CW

KEE, RW

GEIB, KM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1434 / 1438

页数：5

共 19 条

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