KINETIC SIMULATION OF ELECTRONIC-TRANSITIONS BETWEEN ENERGY-LEVELS OF AN IMPURITY DOPED SEMICONDUCTOR

被引：0

作者：

BRINI, J ^{[1
]}

KAMARINOS, G ^{[1
]}

VIKTOROVITCH, P ^{[1
]}

机构：

[1] ECOLE NATL SUPER ELECTR & RADIOELECT, 23 RUE MARTYRS, 38031 GRENOBLE, FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1974年 / 9卷 / 02期

关键词：

D O I：

10.1051/rphysap:0197400902045100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：451 / 454

页数：4

共 8 条

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[2] BARON R, 1970, SEMICONDUCT SEMIMET, V6, pCH4
[3] BRINI J, 1972, CR ACAD SCI D NAT, V275, P2167
[4] SEMICONDUCTOR ABNORMAL MAGNETORESISTANCE RESULTING FROM SURFACE EFFECT FREQUENCY RESPONSE AND CARRIERS EFFECTIVE LIFETIME
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KAMARINOS, G
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1971, 6 (03): : 345 - +
[5] OBSERVATION OF NEGATIVE RESISTANCE IN LONG SILICON P-PI-N DIODES ( EFFECT OF GE-FILTERED LIGHT - E/T )
MAYER, JW
BARON, R
MARSH, OJ
[J]. APPLIED PHYSICS LETTERS, 1965, 6 (02) : 38 - &
[6] Vapaille A., 1970, PHYSIQUE DISPOSITIFS, V1
[7] NEGATIVE-RESISTANCE PHENOMENON IN A SEMICONDUCTOR WITH DEEP CENTERS CHANGED INTO TRAPS BY MAGNETO-DEPLETION EFFECT
VIKTOROVITCH, P
KAMARINOS, G
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 16 (01): : 219 - 224
[8] VIKTOROVITCH P, 1973, CR ACAD SCI B PHYS, V277, P305