FABRICATION OF IN0.25GA0.75AS/INGAASP STRAINED SWQ LASERS ON IN0.05GA0.95AS TERNARY SUBSTRATE

被引：31

作者：

SHOJI, H

UCHIDA, T

KUSUNOKI, T

MATSUDA, M

KURAKAKE, H

YAMAZAKI, S

NAKAJIMA, K

ISHIKAWA, H

机构：

[1] Fujitsu Laboratories Ltd., Atsugi

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 10期

关键词：

D O I：

10.1109/68.329628

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A uniform In0.05Ga0.95As ternary substrate was grown by using liquid encapsulated Czochralski (LEC) technique with a method of supplying GaAs source material at a constant temperature, and InGaAs/InGaAsP strained single quantum well (SQW) lasers were fabricated on the substrate for the first time. The lasers lased at 1.03 mum and exhibited low threshold current density of 222 A/cm2 and excellent characteristic temperature of 221 K, showing that the ternary substrate has a sufficient quality for laser fabrication.

引用

页码：1170 / 1172

页数：3

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