ROOM-TEMPERATURE TAILORING OF ELECTRICAL-PROPERTIES OF TERNARY AND MULTINARY CHALCOGENIDE SEMICONDUCTORS

被引：2

作者：

CAHEN, D ^{[1
]}

CHERNYAK, L ^{[1
]}

GARTSMAN, K ^{[1
]}

LYUBOMIRSKY, I ^{[1
]}

TRIBOULET, R ^{[1
]}

机构：

[1] LAB PHYS SOLIDES,CNRS,MEUDON,FRANCE

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

DOPING; CUINSE2; (CD; HG)TE; DEFECTS; TRANSISTOR;

D O I：

10.7567/JJAPS.32S3.660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semionic behaviour is demonstrated in certain ternary and multinary semiconductors, by following the effects of application of external electric fields at ambient temperature. We find that this can lead to stable, local changes in their microchemical composition and, via resulting changes in carrier concentration, in their electronic properties. Thus, actual device structures are embedded in the material. We summarize these results and our understanding of the mechanisms involved.

引用

页码：660 / 661

页数：2