HIGH-CONCENTRATION ANTIMONY DIFFUSION INTO SILICON USING AUXILIARY WAFERS

被引：4

作者：

NANBA, M

KOZUKA, H

USAMI, K

机构：

来源：

关键词：

D O I：

10.1063/1.92691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：235 / 237

页数：3

共 8 条

[1] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DITZENBERGER, JA .

[2] A DOPED OXIDE DEPOSITION SYSTEM FOR ANTIMONY DIFFUSION [J].

GITTLER, FL ;

PORTER, RA .

[3]

GITTLER FL, 1967, DALLAS M ELECTROCHEM

[4] IMPURITY-INDUCED PIPES THROUGH DIFFUSED LAYERS IN SILICON [J].

GOETZBERGER, A .

[5]

LAROCQUE A, 1958, J ELECTROCHEM SOC, V105, pC254

MUNAKATA, C ;

NANBA, M ;

MATSUBARA, S .

[7] A NEW TECHNIQUE FOR ANTIMONY DIFFUSION INTO SILICON [J].

NANBA, M .

[8]

STULL DR, 1947, IND ENG CHEM, V39, P540