SPIN ORIENTATION BY OPTICAL-PUMPING IN GAAS GROWN ON INP - COMPARISON WITH GAAS/SI

被引：1

作者：

BACQUET, G ^{[1
]}

LAURET, N ^{[1
]}

BENMARZOUK, M ^{[1
]}

PEARTON, SJ ^{[1
]}

HOBSON, WS ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

SOLID STATE COMMUNICATIONS | 1991年 / 80卷 / 09期

关键词：

D O I：

10.1016/0038-1098(91)90884-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effects of hydrogenation on the 1.7 K optical pumping properties of GaAs grown on InP substrate by metalorganic chemical vapor deposition are investigated in the (1.616-2.032 eV) excitation energy range. The optical pumping effects observed on the two transitions involving electrons and M(J) = +/- 1/2 or M(J) = +/- 3/2 holes suggest incomplete hole spin depolarization. These results are compared with those obtained on intentionally undoped GaAs/Si samples.

引用

页码：669 / 672

页数：4

共 14 条

[1] OPTICAL ORIENTATION IN GAAS GROWN ON SI
BACQUET, G
FRANDON, J
BANDET, J
FABRE, F
TAOUINT, R
FONTAINE, C
MUNOZYAGUE, A
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 119 (02): : K181 - K183
[2] 2-DIMENSIONAL-LIKE NUCLEATION OF GAAS ON SI BY ROOM-TEMPERATURE DEPOSITION
CASTAGNE, J
FONTAINE, C
BEDEL, E
MUNOZYAGUE, A
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) : 2372 - 2374
[3] CHAKRABARTI UK, 1989, P SPIE, V114, P69
[4] OPTICAL-PUMPING OF GAAS GROWN ON SI
FRANDON, J
BACQUET, G
BANDET, J
FABRE, F
TAOUINT, R
FONTAINE, C
MUNOZYAGUE, A
[J]. SOLID STATE COMMUNICATIONS, 1990, 73 (07) : 491 - 493
[5] OPTICAL-PUMPING IN SEMICONDUCTORS
HERMANN, C
LAMPEL, G
SAFAROV, VI
[J]. ANNALES DE PHYSIQUE, 1985, 10 (06) : 1117 - 1138
[6] SPIN-DEPENDENT LUMINESCENCE ENHANCED BY INTERFACE STRESS BETWEEN III-V ALLOY LAYERS ON EXCITATION OF CIRCULARLY POLARIZED-LIGHT
HORINAKA, H
NAKANISHI, H
SAIJYO, T
INADA, H
SONOMURA, H
MIYAUCHI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (05): : 765 - 770
[7] LUMINESCENCE STUDIES OF OPTICALLY PUMPED QUANTUM WELLS IN GAAS-ALXGA1-XAS MULTILAYER STRUCTURES
MILLER, RC
KLEINMAN, DA
NORDLAND, WA
GOSSARD, AC
[J]. PHYSICAL REVIEW B, 1980, 22 (02): : 863 - 871
[8] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS
PEARTON, SJ
CORBETT, JW
SHI, TS
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03): : 153 - 195
[9] HYDROGENATION OF GAAS ON SI - EFFECTS ON DIODE REVERSE LEAKAGE CURRENT
PEARTON, SJ
WU, CS
STAVOLA, M
REN, F
LOPATA, J
DAUTREMONTSMITH, WC
VERNON, SM
HAVEN, VE
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 496 - 498
[10] PERFORMANCE OF GAAS-MESFETS ON INP SUBSTRATES
REN, F
HOBSON, WS
PEARTON, SJ
OSTER, LJ
SMITH, PR
[J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (08) : 389 - 390

← 1 2 →