ELECTRIC BREAKDOWN IN A SEMICONDUCTOR IN CROSSED ELECTRIC AND MAGNETIC FIELDS

被引：0
作者：
BYCHKOV, YA
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来源：
SOVIET PHYSICS JETP-USSR | 1970年 / 30卷 / 06期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：1102 / &
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ARONOV AG, 1967, SOV PHYS JETP-USSR, V24, P188
[3]  
ARONOV AG, 1966, ZH EKSP TEOR FIZ, V51, P281
[4]  
Bychkov Yu. A., 1969, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V57, P2031
[5]  
LANDAU LD, 1963, KVANTOVAYA MEKHANIKA
[6]   PHOTON-ASSISTED MAGNETOTUNNELING IN GERMANIUM IN PARALLEL AND CROSSED ELECTRIC AND MAGNETIC FIELDS [J].
REINE, M ;
VREHEN, QHF ;
LAX, B .
PHYSICAL REVIEW, 1967, 163 (03) :726-&
[7]   THEORY OF TUNNELING INCLUDING PHOTON-ASSISTED TUNNELING IN SEMICONDUCTORS IN CROSSED AND PARALLEL ELECTRIC AND MAGNETIC FIELDS [J].
WEILER, MH ;
ZAWADZKI, W ;
LAX, B .
PHYSICAL REVIEW, 1967, 163 (03) :733-&
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