GROWTH AND CHARACTERIZATION OF GAASSB-GAALASSB LATTICE-MATCHED HETEROJUNCTIONS

被引：34

作者：

ANTYPAS, GA ^{[1
]}

MOON, RL ^{[1
]}

机构：

[1] VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 03期

关键词：

D O I：

10.1149/1.2401827

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：416 / 418

页数：3

共 8 条

[1]

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[3] ELECTROREFLECTANCE SPECTRA OF ALXGA1-X AS ALLOYS [J].

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[4] ALXGA1-XAS1-Y'PY'-GAAS1-YPY HETEROSTRUCTURE LASER AND LAMP JUNCTIONS [J].

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[5]

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[6] PREPARATION OF MULTILAYER LPE HETEROSTRUCTURES WITH CRYSTALLINE SOLID SOLUTIONS OF ALXGA1-XAS - HETEROSTRUCTURE LASERS [J].

PANISH, MB ;

SUMSKI, S ;

HAYASHI, I .

METALLURGICAL TRANSACTIONS, 1971, 2 (03) :795-&

[7] GE-DOPED P-TYPE EPITAXIAL GAAS FOR MICROWAVE DEVICE APPLICATION [J].

ROSZTOCZY, FE ;

CALDWELL, JF ;

KINOSHITA, J ;

OMORI, M .

APPLIED PHYSICS LETTERS, 1973, 22 (10) :525-526

[8]

SUGIYAMA K, 1972, JAPAN J APPL PHYS, V11, P1056

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