UNIFORM PARA-TYPE IMPURITY-DOPED MULTIQUANTUM WELL ALGAINP SEMICONDUCTOR-LASERS WITH A LASING WAVELENGTH OF 633 NM AT 20-DEGREES-C

Impurity doping into a GaInP/AlGaInP multiquantum well (MQW) active layer is applied to suppress the occurrence of the ordered structure of column III elements. Calculation of the quantized energy level in an ordered and disordered GaInP quantum well (QW) shows that uniform p-type impurity doping into a MQW structure is more effective than modulation doping for shortening the lasing wavelength. The lasing wavelength of p-doped MQW lasers with a 3-nm-thick GaInP QW can be shortened to 633.2 nm at an output power of 2 mW at 20-degrees-C. A maximum lasing temperature of 46-degrees-C for a 630 nm band AlGaInP MQW laser with a cavity length of 450-mu-m is obtained.