ATOMIC-STRUCTURE-DEPENDENT SCHOTTKY-BARRIER AT EPITAXIAL PB/SI(111) INTERFACES - COMMENT

被引：22
|
作者：
LELAY, G [1 ]
HRICOVINI, K [1 ]
机构：
[1] UNIV PARIS 11,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE
来源：
PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 06期
关键词：
D O I：
10.1103/PhysRevLett.65.807
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A Comment on the Letter by Heslinga et al., Phys. Rev. Lett. 64, 1589 (1990). © 1990 The American Physical Society.
引用
收藏
页码：807 / 807
页数：1
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