SUBMILLIAMPERE-THRESHOLD INGAAS-GAAS QUANTUM-WELL RIDGE-WAVE-GUIDE LASERS WITH LATERAL CONFINEMENT PROVIDED BY IMPURITY-INDUCED DISORDERING

被引：20
作者：
HU, SY
PETERS, MG
YOUNG, DB
GOSSARD, AC
COLDREN, LA
机构：
[1] Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 07期
关键词：
D O I：
10.1109/68.393182
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Significant reduction of threshold currents in InGaAs-GaAs quantum-weil ridge-waveguide lasers has been achieved by using silicon-induced disordering to provide lateral confinement. Room-temperature threshold currents as low as 0.7 mA for pulsed operation and 09 mA for cw operation have been obtained from an uncoated 137-mu m-long and 0.3-mu m-wide device. In addition, the effects of high-temperature annealing on the various device characteristics, such as the gain curve, internal loss, and quantum efficiency, have been investigated.
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页码：712 / 714
页数：3
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