SUBMICROMETER MOSFET STRUCTURE FOR MINIMIZING HOT-CARRIER GENERATION

被引：113

作者：

TAKEDA, E

KUME, H

TOYABE, T

ASAI, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 04期

关键词：

D O I：

10.1109/T-ED.1982.20752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：611 / 618

页数：8

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