LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON

被引：130

作者：

EHRLICH, DJ

OSGOOD, RM

DEUTSCH, TF

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 12期

关键词：

D O I：

10.1063/1.92228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1018 / 1020

页数：3

共 17 条

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APPLIED PHYSICS LETTERS, 1980, 37 (11) :1012-1013

[3] EFFECT OF THE LASER RADIATION INTENSITY ON THE KINETICS OF THE HETEROGENEOUS PHOTOCHEMICAL REACTION BETWEEN SINGLE-CRYSTAL GERMANIUM AND BROMINE GAS. [J].

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Yurshina, N.I. ;

Yurshin, B.Ya. .

1978, 8 (11) :1310-1312

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[5]

COBURN JW, 1979, J APPL PHYS, V50, P3187

[6] LASER PHOTODEPOSITION OF METAL-FILMS WITH MICROSCOPIC FEATURES [J].

DEUTSCH, TF ;

EHRLICH, DJ ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :175-177

[7]

EHRLICH DJ, 1980, APPL PHYS LETT, V36, P916, DOI 10.1063/1.91366

[8] LASER-INDUCED MICROSCOPIC ETCHING OF GAAS AND INP [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :698-700

[9] LASER PHOTOCHEMICAL MICROALLOYING FOR ETCHING OF ALUMINUM THIN-FILMS [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :399-401

[10]

Gatos H.C., 1960, SURFACE CHEM METALS

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