SPUTTER DEPOSITION OF YBA2CU3O7-X FILMS ON SI AT 500-DEGREES-C WITH CONDUCTING METALLIC OXIDE AS A BUFFER LAYER

被引：62

作者：

JIA, QX

ANDERSON, WA

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 03期

关键词：

D O I：

10.1063/1.104218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superconducting YBa2Cu3O7-x thin films were deposited on Si substrates at 500°C by rf magnetron sputtering from a stoichiometric oxide target. Metallic oxide RuO2, sputtered by reactive dc magnetron, was used as a buffer layer to nucleate the superconducting film and minimize the reactions between Si and superconductor. The as-deposited thin films, without further post high-temperature annealing, were completely superconductive at 79 K. Very smooth surface morphology was demonstrated by scanning electron microscopy. X-ray diffraction data indicated that the films had a randomly oriented polycrystalline structure. Auger electron spectroscopy did not reveal interdiffusion of elements in the three layers.

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页码：304 / 306

页数：3

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