ISOMER-SHIFTS OF I-129 IMPURITIES IMPLANTED IN SEMICONDUCTORS - COMMENT

被引：3

作者：

ANTONCIK, E

机构：

[1] Institute of Physics, University of Aarhus, Aarhus C

来源：

HYPERFINE INTERACTIONS | 1979年 / 7卷 / 04期

关键词：

D O I：

10.1007/BF01021514

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

De Waard, Bukshpan and Kemerink have recently measured the isomer shift of129I impurities implanted in semiconductors. It is a gued here that a simple interpretation of these measurements can be given based on the electron structure of both the host materials and the implanted atoms. © 1979 North-Holland Publishing Company.

引用

页码：319 / 322

页数：4

共 9 条

[1]

Antoncik E., 1976, Hyperfine Interactions, V1, P329

[2] CALIBRATION OF ISOMER-SHIFT FOR SN-119 [J].

ANTONCIK, E .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 79 (02) :605-611

[3]

ANTONCIK E, UNPUBLISHED

[4]

HU SM, 1973, ATOMIC DIFFUSION SEM, P261

[5]

PANTELIDES ST, 1978, PHYS REV B, V12, P2543

[6]

Ruby S. L., 1978, Mossbauer isomer shifts, P617

[7]

VETELINO JF, 1969, PHYS REV, V178, P1439

[8]

WAARD HD, 1977, HYP INT, V5, P45

[9]

WAARD HD, 1974, MOSSBAUER EFFECT DAT, P447

← 1 →