GALLIUM-ARSENIDE THIN-FILMS BY LOW-TEMPERATURE PHOTOCHEMICAL PROCESSES

被引：43

作者：

NISHIZAWA, J ^{[1
]}

KURABAYASHI, T ^{[1
]}

ABE, H ^{[1
]}

SAKURAI, N ^{[1
]}

机构：

[1] SEMICOND RES INST,RES DEV CORP JAPAN,NISHIZAWA PERFECT CRYSTAL PROJECT,SENDAI 980,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574567

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1572 / 1577

页数：6

共 17 条

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