ELECTRON MOMENTUM DISTRIBUTION IN SILICON AND GERMANIUM BY POSITRON ANNIHILATION

被引：102

作者：

ERSKINE, JC

MCGERVEY, JD

机构：

来源：

PHYSICAL REVIEW | 1966年 / 151卷 / 02期

关键词：

D O I：

10.1103/PhysRev.151.615

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：615 / &

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