ELECTRON MOMENTUM DISTRIBUTION IN SILICON AND GERMANIUM BY POSITRON ANNIHILATION

被引：102
作者：
ERSKINE, JC
MCGERVEY, JD
机构：
来源：
PHYSICAL REVIEW | 1966年 / 151卷 / 02期
关键词：
D O I：
10.1103/PhysRev.151.615
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：615 / &
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