NUCLEATION AND GROWTH OF ALUMINUM-OXIDE ON SILICON IN THE CVD PROCESS

被引：20

作者：

CHOI, SW

KIM, C

KIM, JG

CHUN, JS

机构：

来源：

JOURNAL OF MATERIALS SCIENCE | 1987年 / 22卷 / 03期

关键词：

D O I：

10.1007/BF01103550

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1051 / 1056

页数：6

共 14 条

[1] STRUCTURE-PROPERTY-PROCESS RELATIONSHIPS IN CHEMICAL VAPOR-DEPOSITION CVD [J].

BLOCHER, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (04) :680-686

[2]

COLMET R, 1981, 8TH P INT C CVD, P17

[3] THERMODYNAMICS STUDIES OF HIGH TEMPERATURE EQUILIBRIA .3. SOLGAS, A COMPUTER PROGRAM FOR CALCULATING COMPOSITION AND HEAT CONDITION OF AN EQUILIBRIUM MIXTURE [J].

ERIKSSON, G .

ACTA CHEMICA SCANDINAVICA, 1971, 25 (07) :2651-&

[4]

FUNK R, 1975, 5TH P INT C CVD NEW, P469

[5]

GRETZ RD, 1966, VAPOR DEPOSITION, P149

[6]

HIRTH JP, 1966, VAPOR DEPOSITION, P126

[7] PHYSICAL AND CHEMICAL PROPERTIES OF ALUMINUM-OXIDE FILM DEPOSITED BY ALCL3-CO2-H2 SYSTEM [J].

IIDA, K ;

TSUJIDE, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (06) :840-&

[8] EFFECT OF PARTIAL-PRESSURE OF THE REACTANT GAS ON THE CHEMICAL VAPOR-DEPOSITION OF AL2O3 [J].

KIM, JG ;

PARK, CS ;

CHUN, JS .

THIN SOLID FILMS, 1982, 97 (01) :97-106

[9]

LINDSTROM JN, 1976, J ELECTROCHEM SOC, V123, P854

[10] READ-ONLY MEMORY USING MAS TRANSISTORS [J].

NAKANUMA, S ;

TSUJIDE, T ;

IGARASHI, R ;

ONODA, K ;

WADA, T ;

NAKAGIRI, M .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1970, SC 5 (05) :203-&

← 1 2 →