TRANSITION FROM SEMICONDUCTOR TO METAL OF LOWER VANADIUM OXIDES PREPARED BY CERAMIC TECHNOLOGY

被引：0

作者：

ANTONIN, V ^{[1
]}

KOLLER, A ^{[1
]}

NEJEZCHL.K ^{[1
]}

机构：

[1] RES INST ELECTROTECH CERAMICS, HRADEC KRALOV, CZECHOSLOVAKIA

来源：

SILIKATY | 1973年 / 17卷 / 01期

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：21 / 30

页数：10

共 28 条

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ADLER, D
[J]. REVIEWS OF MODERN PHYSICS, 1968, 40 (04) : 714 - +
[2] BOGDANOVA NI, 1960, ZH OBSHCH KHIM+, V30, P3
[3] BRAUER J, 1954, HDB PRAPARATIVEN ANO
[4] BULAEVSKII LN, 1967, FIZ TVERD TELA, V9, P3070
[5] BURDESE A, 1967, ANN CHIM-ROME, V47, P785
[6] CHESNEY JB, 1968, J ELECTROCHEM SOC, V115, P52
[7] FOEX S, 1952, J RECH CNRS, P21
[8] FRIEDRICH VE, 1955, Z ANORG ALLG CHEM, V145, P127
[9] A NEW TYPE SEMICONDUCTOR ( CRITICAL TEMPERATURE RESISTER )
FUTAKI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (01) : 28 - +
[10] EQUILIBRIA IN V2O3-VO2 SYSTEM AT 1600 DEGREES K
KATSURA, T
HASEGAWA, M
[J]. BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, 1967, 40 (03) : 561 - +