THE INFLUENCE OF A HYDRIDE PREFLOW ON THE CRYSTALLINE QUALITY OF INP GROWN ON EXACTLY ORIENTED (100)SI

被引：8

作者：

LUBNOW, A ^{[1
]}

TANG, GP ^{[1
]}

WEHMANN, HH ^{[1
]}

SCHLACHETZKI, A ^{[1
]}

BUGIEL, E ^{[1
]}

ZAUMSEIL, P ^{[1
]}

机构：

[1] INST HALBLEITERPHYS,O-1200 FRANKFURT,GERMANY

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 12期

关键词：

INP-ON-SI HETEROEPITAXY; MOVPE; HYDRIDE PREFLOW;

D O I：

10.1007/BF02667607

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several microns thick epitaxial InP films have been successfully deposited on exactly oriented (100) Si substrates by metal-organic vapour-phase epitaxy. We have studied the influence of a hydride preflow before buffer growth on the crystalline quality of the InP by measuring the surface roughness, by X-ray diffractometry, TEM and SEM investigations, and by detection of anti-phase-domains. Generally, an AsH3 preflow instead of PH3 improved the crystalline perfection considerably. Furthermore, if AsH3 is introduced only during cool-down between 700 and 900-degrees-C after the thermal cleaning step anti-phase-domain free InP is grown.

引用

页码：1141 / 1146

页数：6

共 30 条

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