DOUBLE-SIDE PLANAR-DOPED ALGAAS/INGAAS/ALGAAS MODFET WITH CURRENT-DENSITY OF 1-A/MM

被引：9

作者：

DICKMANN, J ^{[1
]}

DAEMBKES, H ^{[1
]}

NICKEL, H ^{[1
]}

SCHLAPP, W ^{[1
]}

LOSCH, R ^{[1
]}

机构：

[1] DBP TELEKOM,RES CTR,W-6100 DARMSTADT,GERMANY

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 06期

关键词：

D O I：

10.1109/55.82076

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaAs/InGaAs/AlGaAs double-side planar-doped (DSPD) pseudomorphic MODFET's of 0.3-mu-m gate length with both excellent dc and RF performance have been fabricated. A maximum unilateral gain cutoff frequency of f(C) = 170 GHz and a maximum current gain cutoff frequency of f(T) = 60 GHz have been achieved. The devices exhibit a maximum transconductance of 500 mS/mm and an extremely high current density of 1 A/mm. These are the highest frequencies report so far for MODFET devices being capable of driving 1-A/mm current density. This current density is the highest ever reported with this type of layer structure.

引用

页码：327 / 328

页数：2

共 4 条

[1] MULTIPLE QUANTUM WELL ALGAAS/GAAS FIELD-EFFECT TRANSISTOR STRUCTURES FOR POWER APPLICATIONS [J].