EFFECT OF DOPING PROFILE ON CHARACTERISTICS OF BURIED-CHANNEL CHARGE-COUPLED-DEVICES

被引：0

作者：

BANERJEE, S

机构：

来源：

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D O I：

10.1080/00207217808900880

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：49 / 61

页数：13

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[22] CHARGE-COUPLED-DEVICES
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[29] CHARGE-COUPLED-DEVICES
不详
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