EFFECT OF DOPING PROFILE ON CHARACTERISTICS OF BURIED-CHANNEL CHARGE-COUPLED-DEVICES

被引：0
作者：
BANERJEE, S
机构：
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1978年 / 45卷 / 01期
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D O I：
10.1080/00207217808900880
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：49 / 61
页数：13
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