EFFECT OF DOPING PROFILE ON CHARACTERISTICS OF BURIED-CHANNEL CHARGE-COUPLED-DEVICES

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作者：

BANERJEE, S

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来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1978年 / 45卷 / 01期

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D O I：

10.1080/00207217808900880

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TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

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页码：49 / 61

页数：13

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