IMPROVED THERMAL-STABILITY OF IN0.53GE0.47AS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH AL2O3 INTERFACIAL LAYER

被引：6
作者：
KLOCKENBRINK, R
WEHMANN, HH
SCHLACHETZKI, A
机构：
[1] Institut fur Halbleitertechnik Technical University, Braunschweig, D-38106, Braunschweig
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 10期
关键词：
D O I：
10.1109/68.329642
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The thermal stability of In0.53Ga0.47As metal-semiconductor-metal photodetectors has been improved by using thin electron-beam evaporated Al2O3 interfacial layers of different thickness. The addition of the interfacial layer allows for an increase in anneal temperature from 250-degrees-C to 350-degrees-C with a four-fold dark current increase. Measurements of impulse responses at 1.3 mum showed, that the frequency behaviour is not adversely affected by the increased capacitance caused by oxide charges, since metal-semiconductor-metal photodetectors are carrier transit-time limited.
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页码：1213 / 1215
页数：3
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