NEW STRUCTURAL APPROACH FOR REDUCING PUNCHTHROUGH CURRENT IN DEEP-SUBMICROMETER MOSFETS AND EXTENDING MOSFET SCALING

被引：22

作者：

HARELAND, SA

TASCH, AF

MAZIAR, CM

机构：

[1] Microelectronics Research Center, University of Texas, Austin

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 21期

关键词：

MOSFETS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19931261

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A heterojunction MOSFET structure is proposed in which the energy band offset of a heterojunction provides an additional potential energy barrier at the source in order to improve the turn-off characteristics in extremely small MOSFETs. Initial numerical simulations of this device show that the heterojunction MOSFET yields a substantial improvement in off-state leakage current compared to a conventional all-Si (homojunction) MOSFET. An additional design technique such as this is believed to be able to allow devices to be scaled more effectively to less-than-or-equal-to 0.1 mum technology.

引用

页码：1894 / 1896

页数：3