IRON DOPING IN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY

被引：5
作者：
COVINGTON, DW
COMAS, J
YU, PW
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
[2] UNIV DAYTON,DEPT PHYS,DAYTON,OH 45469
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 12期
关键词：
D O I：
10.1063/1.91884
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1094 / 1096
页数：3
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