CONTROL OF ZN DOPING FOR GROWTH OF INP PN JUNCTION BY LIQUID-PHASE EPITAXY

被引：23

作者：

WADA, O ^{[1
]}

MAJERFELD, A ^{[1
]}

ROBSON, PN ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 10期

关键词：

D O I：

10.1149/1.2129392

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2278 / 2284

页数：7

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[9] COMPARISON OF ZN-DOPED GAAS LAYERS PREPARED BY LIQUID-PHASE AND VAPOR-PHASE TECHNIQUES, INCLUDING DIFFUSION LENGTHS AND PHOTOLUMINESCENCE [J].

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