LASER NONLINEAR-OPTICAL PROBING OF SILICON/SIO2 INTERFACES - SURFACE STRESS FORMATION AND RELAXATION

被引：43

作者：

GOVORKOV, SV

KOROTEEV, NI

PETROV, GI

SHUMAY, IL

YAKOVLEV, VV

机构：

[1] R. V. Khokhlov Nonlinear Optics Laboratory, Moscow State University, Moscow

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 50卷 / 04期

关键词：

42.65; 68.35;

D O I：

10.1007/BF00323603

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A nonlinear optical technique based on optical second harmonic generation in reflection is shown to provide information on the surface layer structure of semiconductor crystals, thin films and layered systems. The second harmonic intensity is sensitive to inhomogeneous stress in centrosymmetric materials via spatial selection rules and the appearance of an electric dipole contribution to the second order nonlinear optical susceptibility. The technique is used to monitor mechanical stress relaxation in the SiO2/Si interface during several annealing procedures. © 1990 Springer-Verlag.

引用

页码：439 / 443

页数：5

共 13 条

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[2]

AKTSIPETROV OA, 1986, PISMA ZH TEKH FIZ+, V12, P1345

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