GROWTH-RATE ENHANCEMENT USING OZONE DURING RAPID THERMAL-OXIDATION OF SILICON

被引：36

作者：

KAZOR, A ^{[1
]}

GWILLIAM, R ^{[1
]}

BOYD, IW ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,SERC,CENT FACIL ION BEAM TECHNOL,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 04期

关键词：

D O I：

10.1063/1.112318

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Rapid thermal oxidation of Si in a mixed oxygen and ozone ambient in the temperature range of 600-1200-degrees-C is reported. Between 600 and 800-degrees-C a large enhancement in oxidation is observed compared with conventional oxide growth in a pure oxygen ambient. For temperatures above 950-degrees-C conventional thermal oxidation dominates and no significant enhancement is found.

引用

页码：412 / 414

页数：3

共 20 条

[1]

Barry K., 1990, European Semiconductor, V12

[2]

BENSON SW, 1957, J CHEM PHYS, V26, P1717

[3]

BLALUCH DL, 1980, PHYS CHEM REF DATA, V9, P295

[4] ENHANCEMENT IN THERMAL-OXIDATION OF SILICON BY OZONE [J].