Mechanisms of carrier transport in CdTe polycrystalline films

被引：2

作者：

Sukach, A. V. ^{[1
]}

Tetyorkin, V. V. ^{[1
]}

Krolevec, N. M. ^{[1
]}

机构：

[1] NAS Ukraine, V Lashkaryov Inst Semicond Phys, 41 Prospect Nauky, UA-03028 Kiev, Ukraine

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2010年 / 13卷 / 02期

关键词：

CdTe; polycrystalline film; percolation conductivity;

D O I：

10.15407/spqeo13.02.221

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average grain sizes about 10 mu m. The in-plain direct current conductivity as a function of temperature and electric field has been investigated. The percolation conductivity is shown to be dominant at low temperatures (T < 250 K). At room temperature, the dominant transport mechanism is an activated process such as thermionic emission. The carrier transport across barriers is influenced by traps in the surface barrier regions. The non-annealed films exhibited stable electrical parameters and high photosensitivity during five-year storage under laboratory conditions.

引用

页码：221 / 225

页数：5

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