SURFACE CONDUCTIVITY OF CLEAVED SILICON SURFACES

被引：8

作者：

HANDLER, P

机构：

来源：

PHYSICAL REVIEW | 1962年 / 126卷 / 03期

关键词：

D O I：

10.1103/PhysRev.126.971

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：971 / &

共 12 条

[1]

Allen F.G., 1961, B AM PHYS SOC 2, V6, P421

[2] ELECTRICAL PROPERTIES OF CLEAN GERMANIUM SURFACES [J].

BARNES, GA ;

BANBURY, PC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :111-113

[3] WORK FUNCTION AND SORPTION PROPERTIES OF SILICON CRYSTALS [J].

DILLON, JA ;

FARNSWORTH, HE .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1195-1202

[4] PROPERTIES OF CLEANED GERMANIUM SURFACES [J].

FORMAN, R .

PHYSICAL REVIEW, 1960, 117 (03) :698-704

[5] PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].

GARRETT, CGB ;

BRATTAIN, WH .

PHYSICAL REVIEW, 1955, 99 (02) :376-387

[6] SURFACE MEASUREMENTS ON FRESHLY CLEAVED SILICON PARA-NORMAL JUNCTIONS [J].

GOBELI, GW ;

ALLEN, FG .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :23-&

[7]

GOBELI GW, 1961, B AM PHYS SOC, V6, P421

[8] ELECTRONIC SURFACE STATES AND THE CLEANED GERMANIUM SURFACE [J].

HANDLER, P ;

PORTNOY, WM .

PHYSICAL REVIEW, 1959, 116 (03) :516-526

[9] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].

KINGSTON, RH ;

NEUSTADTER, SF .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :718-720

[10] SURFACE STATES ON CLEAVED SILICON [J].

PALMER, DR ;

DAUENBAUGH, CE ;

MORRISON, SR .

PHYSICAL REVIEW LETTERS, 1961, 6 (04) :170-&

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