PHOTOSTRICTION EFFECT IN SILICON OBSERVED BY TIME-RESOLVED X-RAY-DIFFRACTION

被引：18
|
作者：
BUSCHERT, JR [1 ]
COLELLA, R [1 ]
机构：
[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907
来源：
SOLID STATE COMMUNICATIONS | 1991年 / 80卷 / 06期
关键词：
D O I：
10.1016/0038-1098(91)90718-B
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have observed by X-ray diffraction the contraction of the lattice in silicon due to electron-hole pairs excited by laser light. The observed change in lattice parameter DELTA-a/a (congruent-to 10(-5)) is consistent with a photostriction constant beta-five times greater than the currently accepted value.
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页码：419 / 422
页数：4
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