CORNER BREAKDOWN IN MOS-TRANSISTORS WITH LIGHTLY-DOPED DRAINS

[1] DRAIN VOLTAGE LIMITATIONS OF MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (06) : 539 - 550

[2] COMPARISON OF SIMPLE AND NUMERICAL 2-DIMENSIONAL MODELS FOR THRESHOLD VOLTAGE OF SHORT CHANNEL MOSTS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (12) : 993 - 998

[3] COE DJ, 1978, SOLID ST ELECTRON DE, V2, P57

[4] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) : 134 - +

[5] GRAAFF HCD, 1970, PHILIPS RES REP, V25, P21

[6] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) : 157 - +

[7] DESIGN AND PERFORMANCE OF MICRON-SIZE DEVICES [J]. SOLID-STATE ELECTRONICS, 1978, 21 (03) : 565 - 571

[8] A rapid method of predicting the sheet resistances of boron implanted layers [J]. Radiation Effects, 1976, 28 (3-4): : 177 - 181

[9] CALCULATION OF DIFFUSION CURVATURE RELATED AVALANCHE BREAKDOWN IN HIGH-VOLTAGE PLANAR P-N-JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (10) : 910 - 916

[10] YOSHIDA I, 1976, IEEE J SOLID-ST CIRC, V11, P472, DOI 10.1109/JSSC.1976.1050761

[1] DRAIN VOLTAGE LIMITATIONS OF MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (06) : 539 - 550

[2] COMPARISON OF SIMPLE AND NUMERICAL 2-DIMENSIONAL MODELS FOR THRESHOLD VOLTAGE OF SHORT CHANNEL MOSTS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (12) : 993 - 998

[3] COE DJ, 1978, SOLID ST ELECTRON DE, V2, P57

[4] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) : 134 - +

[5] GRAAFF HCD, 1970, PHILIPS RES REP, V25, P21

[6] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) : 157 - +

[7] DESIGN AND PERFORMANCE OF MICRON-SIZE DEVICES [J]. SOLID-STATE ELECTRONICS, 1978, 21 (03) : 565 - 571

[8] A rapid method of predicting the sheet resistances of boron implanted layers [J]. Radiation Effects, 1976, 28 (3-4): : 177 - 181

[9] CALCULATION OF DIFFUSION CURVATURE RELATED AVALANCHE BREAKDOWN IN HIGH-VOLTAGE PLANAR P-N-JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (10) : 910 - 916

[10] YOSHIDA I, 1976, IEEE J SOLID-ST CIRC, V11, P472, DOI 10.1109/JSSC.1976.1050761