TSC MEASUREMENTS OF COUPLED LEVELS IN ION-IMPLANTED SI

被引:3
|
作者
LUDMAN, J
ROOSILD, S
VICKERS, V
机构
关键词
D O I
10.1007/BF02655417
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:535 / 546
页数:12
相关论文
共 50 条
  • [1] TSC MEASUREMENTS OF COUPLED LEVELS IN ION-IMPLANTED SI
    LUDMAN, J
    ROOSILD, S
    VICKERS, V
    JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (06) : 736 - 736
  • [2] DEEP LEVELS IN ION-IMPLANTED SI AFTER BEAM ANNEALING
    SHENG, NH
    MIZUTA, M
    MERZ, JL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1256 - 1256
  • [3] DEEP LEVELS IN ION-IMPLANTED SI AFTER BEAM ANNEALING
    SHENG, NH
    MIZUTA, M
    MERZ, JL
    APPLIED PHYSICS LETTERS, 1982, 40 (01) : 68 - 70
  • [4] Defect study on ion-implanted Si by coincidence Doppler broadening measurements
    Akahane, T
    Fujinami, A
    Sawada, T
    APPLIED SURFACE SCIENCE, 2002, 194 (1-4) : 116 - 121
  • [5] Nanomechanical properties of ion-implanted Si
    Nagy, P. M.
    Aranyi, D.
    Horvath, P.
    Peto, G.
    Kalman, E.
    SURFACE AND INTERFACE ANALYSIS, 2008, 40 (3-4) : 875 - 880
  • [6] Interstitial defects in ion-implanted Si
    Kovacevic, I
    Borjanovic, V
    Pivac, B
    VACUUM, 2003, 71 (1-2) : 129 - 133
  • [7] EPR OF ION-IMPLANTED DONORS IN SI
    BROWER, KL
    BORDERS, JA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 267 - &
  • [8] DECHANNELING BY DISLOCATIONS IN ION-IMPLANTED SI
    GRUSKA, B
    GOTZ, G
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 59 (3-4): : 157 - 167
  • [9] NOISE MEASUREMENTS IN ION-IMPLANTED MOSFETS
    PARK, HS
    VANDERZIEL, A
    SOLID-STATE ELECTRONICS, 1983, 26 (08) : 747 - 751
  • [10] MICROUNIFORMITY MEASUREMENTS OF ION-IMPLANTED SILICON
    CURRENT, MI
    OHNO, N
    HURLEY, K
    KEENAN, WA
    GUITNER, TL
    JEYNES, C
    SOLID STATE TECHNOLOGY, 1993, 36 (07) : 111 - &