AN EXPERIMENTAL-STUDY OF THE NORMAL-SI-ACETONITRILE INTERFACE - FERMI LEVEL PINNING AND SURFACE-STATES INVESTIGATION

被引：45

作者：

CHAZALVIEL, JN ^{[1
]}

TRUONG, TB ^{[1
]}

机构：

[1] UNIV PARIS 11,CHIM PHYS LAB,ERA 718,F-91405 ORSAY,FRANCE

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 1981年 / 103卷 / 25期

关键词：

D O I：

10.1021/ja00415a008

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：7447 / 7451

页数：5

共 29 条

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[2]

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[5] PHOTO-REDUCTION AT ILLUMINATED P-TYPE SEMICONDUCTING SILICON PHOTOELECTRODES - EVIDENCE FOR FERMI LEVEL PINNING [J].

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[6] CHEMICALLY DERIVATIZED N-TYPE SILICON PHOTOELECTRODES - STABILIZATION TO SURFACE CORROSION IN AQUEOUS-ELECTROLYTE SOLUTIONS AND MEDIATION OF OXIDATION REACTIONS BY SURFACE-ATTACHED ELECTROACTIVE FERROCENE REAGENTS [J].

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[7] PHOTOCURRENT SPECTROSCOPY OF INTERFACE STATES AT A SEMICONDUCTOR-ELECTROLYTE JUNCTION [J].

CHAZALVIEL, JN .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) :1822-1826

[8] SCHOTTKY-BARRIER HEIGHT AND REVERSE CURRENT OF THE N-SI-ELECTROLYTE JUNCTION [J].

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SURFACE SCIENCE, 1979, 88 (01) :204-220

[9] A QUANTITATIVE STUDY OF FERMI LEVEL PINNING AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].

CHAZALVIEL, JN ;

TRUONG, TB .

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[10]

CHAZALVIEL JN, UNPUBLISHED

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