OPTICAL-CONSTANTS FOR SILICON AT 300-K AND 10-K DETERMINED FROM 1.64-EV TO 4.73-EV BY ELLIPSOMETRY

被引:159
作者
JELLISON, GE
MODINE, FA
机构
关键词
D O I
10.1063/1.331113
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3745 / 3753
页数:9
相关论文
共 33 条
[2]  
Aspnes D. E., 1973, Optics Communications, V8, P222, DOI 10.1016/0030-4018(73)90132-6
[3]   SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].
ASPNES, DE ;
THEETEN, JB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1359-1365
[4]   HIGH PRECISION SCANNING ELLIPSOMETER [J].
ASPNES, DE ;
STUDNA, AA .
APPLIED OPTICS, 1975, 14 (01) :220-228
[5]   OPTICAL-PROPERTIES OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].
ASPNES, DE ;
THEETEN, JB .
PHYSICAL REVIEW LETTERS, 1979, 43 (14) :1046-1050
[6]  
Azzam RMA, 1977, ELLIPSOMETRY POLARIZ
[7]   WAVELENGTH-SCANNING POLARIZATION-MODULATION ELLIPSOMETRY - SOME PRACTICAL CONSIDERATIONS [J].
BERMUDEZ, VM ;
RITZ, VH .
APPLIED OPTICS, 1978, 17 (04) :542-552
[9]   ELLIPS - FORTRAN SIMULATION OF A POLARIZATION-MODULATION ELLIPSOMETER [J].
BERMUDEZ, VM .
COMPUTER PHYSICS COMMUNICATIONS, 1977, 13 (03) :207-224
[10]   INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J].
BRAUNSTEIN, R ;
MOORE, AR ;
HERMAN, F .
PHYSICAL REVIEW, 1958, 109 (03) :695-710