TOWARD A MODEL OF RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES

被引：0
|
作者：
MCLEAN, FB [1 ]
BOESCH, HE [1 ]
WINOKUR, PS [1 ]
机构：
[1] USA,ELECTR RES & DEV COMMAND,HARRY DIAMOND LABS,WASHINGTON,DC 20310
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1981年 / 26卷 / 03期
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D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：219 / 219
页数：1
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