TOWARD A MODEL OF RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES

被引：0

作者：

MCLEAN, FB ^{[1
]}

BOESCH, HE ^{[1
]}

WINOKUR, PS ^{[1
]}

机构：

[1] USA,ELECTR RES & DEV COMMAND,HARRY DIAMOND LABS,WASHINGTON,DC 20310

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1981年 / 26卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：219 / 219

页数：1

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