VACUUM ULTRAVIOLET LASER-INDUCED SURFACE ALTERATION OF SIO2

被引：12

作者：

KUROSAWA, K

TAKIGAWA, Y

SASAKI, W

KATTO, M

INOUE, Y

机构：

[1] OSAKA ELECTROCOMMUN UNIV,DEPT SOLID STATE ELECTR,NEYAGAWA,OSAKA 572,JAPAN

[2] UNIV OSAKA PREFECTURE,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN

[3] SHIMADZU CO LTD,DIV SCI EQUIPMENT,KYOTO 604,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 11B期

关键词：

LASER MATERIAL PROCESSING; VACUUM ULTRAVIOLET WAVELENGTH; RARE GAS EXCIMER LASER; SILICON DIOXIDE; MICROELECTRONICS; SUPERDRY PROCESS;

D O I：

10.1143/JJAP.30.3219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Intense vacuum ultraviolet laser radiation is generated from rare gas excimer lasers. 9.8 eV photons from an argon excimer laser change surfaces of SiO2 to silicon. The reaction proceeds without the aid of reactive gas or solution and is thus called the "superdry process". 9.8 eV photons create excitons via an efficient one-photon absorption process, and then these high-density excitons induce bond-breaking between Si and O.

引用

页码：3219 / 3222

页数：4

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