INTEGRATED SOL-GEL PZT THIN-FILMS ON PT, SI, AND GAAS FOR NONVOLATILE MEMORY APPLICATIONS

被引：183

作者：

DEY, SK ^{[1
]}

ZULEEG, R ^{[1
]}

机构：

[1] MCDONNELL DOUGLAS CORP,HUNTINGTON BEACH,CA 92647

来源：

FERROELECTRICS | 1990年 / 108卷

关键词：

D O I：

10.1080/00150199008018730

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Properties of integrated sol-gel PZT thin-films of various ZrDi ratios, evaluated as a function of processing parameters, are presented and discussed. The substrate materials for the P2T depositions encompassed R, Si, and GaAs. The design, fabrication, and operation of a single F%T element combined with the GaAs JFET planar integrated circuit technology to produce non-volatile programmable random access memories (NVPRAM) 8 ∼pere sented. © 1990, Taylor & Francis Group, LLC. All rights reserved.

引用

页码：37 / 46

页数：10

共 7 条

[1]

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[2]

CHEN XT, 1986, 6TH P IEEE INT S FER, P62

[3]

CROSS LE, 1987, FERROELECTRICS, V76, P262

[4]

DEY SK, 1989, IN PRESS 1ST P S INT

[5]

ISHIBASHI Y, 1987, JPN J APPL PHYS, V61, P5467

[6]

LINES ME, 1977, PRINCIPLES APPLICATI, P7

[7] SWITCHING KINETICS OF LEAD ZIRCONATE TITANATE SUB-MICRON THIN-FILM MEMORIES [J].

SCOTT, JF ;

KAMMERDINER, L ;

PARRIS, M ;

TRAYNOR, S ;

OTTENBACHER, V ;

SHAWABKEH, A ;

OLIVER, WF .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) :787-792

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