INDIRECT ENERGY GAP IN GASE AND GAS

被引：226

作者：

AULICH, E

BREBNER, JL

MOOSER, E

机构：

[1] Cyanamid European Research Institute Cologny, Geneva

来源：

PHYSICA STATUS SOLIDI | 1969年 / 31卷 / 01期

关键词：

D O I：

10.1002/pssb.19690310115

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Optical absorption measurements on thick monocrystalline samples of GaSe1−xSx show that in these mixed crystals the lowest energy gap is indirect in the complete range 0 ≦ x ≦ 1. These results are contrary to earlier reports which indicate that GaSe is a direct gap semiconductor. In the case of GaS the absorption spectra allow a tentative identification of the phonons involved in the indirect transition. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：129 / &

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