INDIRECT ENERGY GAP IN GASE AND GAS

被引：223
作者：
AULICH, E
BREBNER, JL
MOOSER, E
机构：
[1] Cyanamid European Research Institute Cologny, Geneva
来源：
PHYSICA STATUS SOLIDI | 1969年 / 31卷 / 01期
关键词：
D O I：
10.1002/pssb.19690310115
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Optical absorption measurements on thick monocrystalline samples of GaSe1−xSx show that in these mixed crystals the lowest energy gap is indirect in the complete range 0 ≦ x ≦ 1. These results are contrary to earlier reports which indicate that GaSe is a direct gap semiconductor. In the case of GaS the absorption spectra allow a tentative identification of the phonons involved in the indirect transition. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：129 / &
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